Shelfclass |
Sortkey |
Title |
6.B |
ALVAREZ, ANTONIO R |
BiCMOS Technology and Applications |
6.B |
BALKANSKI, MINKO |
Devices Based on Low-Dimensional Semiconductor Structures |
6.B |
BANERJEE, SWAGATA RIKI |
Three Dimensional Wafer Level Interconnects for Integration in High Speed, Broadband Packaging and Circuit Applications |
6.B |
BAUER, GÜNTHER |
Optical Characterization of Epitaxial Semiconductor Layers |
6.B |
BERESFORD, RODERIC |
Papers from the 15th North American Conference on Molecular Beam Epitaxy |
6.B |
BITTER, FRANCIS |
Currents, Fields, and Particles |
6.B |
BREWER, GEORGE R |
Electron-Beam Technology in Microelectronic Fabrication |
6.B |
BRILLSON, L. J |
Frontiers in Electronic Materials & Processing: Houston, Texas, November 1985 |
6.B |
BROWNE, B. T |
Numerical Analysis of Semiconductor Devices and Integrated Circuits: Proceedings of the NASECODE II Conference held at Trinity College, Dublin, from 17th to 19th June, 1981 |
6.B |
BURGER, R. M |
Fundamentals of Silicon Integrated Device Technology: Volume 1: Oxidation, Diffusion and Epitaxy |
6.B |
BURGER, R. M |
Fundamentals of Silicon Integrated Device Technology: Volume 2: Bipolar and Unipolar Transistors |
6.B |
CARTS |
CARTS 1984: 4th Capasitor and Resistor Technology Symposium: CARTS'84: March 7-8, 1984, Court of Flags Resort Hotel, Orlando, Florida |
6.B |
CASPER, LAWRENCE A |
Microelectronics Processing: Inorganic Materials Characterization |
6.B |
CHAFFIN, ROGER J |
Microwave Semiconductor Devices: Fundamentals and Radiation Effects |
6.B |
CHAMBERLAIN, J. M. |
Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures |
6.B |
CMP-MIC/05 |
2005 Proceedings Ninth International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference (CMP-MIC): February 23-25, 2005. Marriott Hotel Fremint, CA. CMP-MIC Catalog No. 05 IMIC-1000P. |
6.B |
CROON, JEROEN A |
Matching Properties of Deep Sub-Micron MOS Transistors |
6.B |
CUTLER, MELVIN |
Liquid Semiconductors |
6.B |
DAMMEL, RALPH |
Diazonaphthoquinone-Based Resists |
6.B |
DAVIDSON, THEODORE |
Polymers in Electronics: Based on a symposium sponsored by the Division of Organic Coatings and Plastics Chemistry at the 185th Meeting of the American Chemical Society, Seattle, Washington, March 20-25, 1983 |
6.B |
DAVIES, JOHN H |
The Physics of Low-Dimensional Semiconductors: an introduction |
6.B |
DIELECTRIC |
Dielectric 1979: Third International Conference on Dielectric Materials, Measurements and Applications: 10-13 September 1979 |
6.B |
DUTTA, NILOY K |
Semiconductor Optical Amplifiers |
6.B |
EASTMAN, LESTER F |
Gallium Arsenide Microwave Bulk and Transit-Time Devices |
6.B |
ELLIOTT, DAVID J |
Integrated Circuit Fabrication Technology |
6.B |
EMPC |
EMPC 1990: Proceedings of ASM International's 3rd Electronic Materials & Processing Congress: New Technology in Electronic Packaging: San Francisco, California, USA, 20-23 August 1990 |
6.B |
EMPC |
EMPC 1991: Proceedings of the Fourth Electronic Materials and Processing Congress: Materials Developments in Microelectronic Packaging: Performance and Reliability |
6.B |
FERRY, DAVID K |
Gallium Arsenide Technology |
6.B |
GAPONENKO, S. V |
Optical Properties of Semiconductor Nanocrystals |
6.B |
GENG, HWAIYU |
Semiconductor Manufacturing Handbook |
6.B |
GHANDHI, SORAB KHUSHRO |
The Theory and Practice of Microelectronics |
6.B |
GISE, PETER |
Semiconductor and Integrated Circuit Fabrication Techniques |
6.B |
GRAY, PAUL E |
Physical Electronics and Circuit Models of Transistors |
6.B |
GUPTA, DINES C |
Emerging Semiconductor Technology: A Symposium |
6.B |
HAO, YUE |
Nitride Wide Bandgap Semiconductor Material and Electronic Devices |
6.B |
HMF |
HMF 1978: The Application of High Magnetic Fields in Semiconductor Physics: Oxford, 11-15 September 1978 |
6.B |
HMF |
HMF 1986: High Magnetic Fields in Semiconductor Physics: Proceedings of the International Conference, Würzburg, Fed. Rep. of Germany, August 18-22, 1986 |
6.B |
HMF |
HMF 1988: High Magnetic Fields in Semiconductor Physics II: Transport and Optics: Proceedings of the International Conference, Würzburg, Fed. Rep. of Germany, August 22-26, 1988 |
6.B |
HMF |
HMF 1990: High Magnetic Fields in Semiconductor Physics III: Quantum Hall Effect, Transport and Optics: Proceedings of the International Conference, Würzburg, Fed. Rep. of Germany, July 30 - August 3, 1990 |
6.B |
HU, T.C |
VLSI Circuit Layout: Theory and Design |
6.B |
ICPS |
ICPS 1986 V2: 18th International Conference on the Physics of Semiconductors: Volume 2: Stockholm, Sweden, August 11-15, 1986 |
6.B |
ICPS |
ICPS 1988 V1: 19th International Conference on the Physics of Semiconductors: Volume 1: Warsaw, Poland, August 15-19, 1988 |
6.B |
ICPS |
ICPS 1988 V2: 19th International Conference on the Physics of Semiconductors: Volume 2: Warsaw, Poland, August 15-19, 1988 |
6.B |
ISPD |
ISPD '08: Proceedings of the 2008 ACM International Symposium on Physical Design, Portland, Oregon, USA, April 13-16, 2008 |
6.B |
ISTFA |
ISTFA 1982: Proceedings ISTFA 1982: International Symposium for Testing and Failure Analysis 1982: [electronic resource] :: 25-27 October 1982, San Jose, California, U.S.A. |
6.B |
ISTFA |
ISTFA 1983: Proceedings ISTFA 1983: International Symposium for Testing and Failure Analysis 1983: [electronic resource] :: 17-19 October 1983, Los Angeles, California, U.S.A. |
6.B |
ISTFA |
ISTFA 1985: Proceedings ISTFA 1985: International Symposium for Testing and Failure Analysis 1985: [electronic resource] :: 21-23 October 1985, Long Beach, California, U.S.A. |
6.B |
ISTFA |
ISTFA 1986: Proceedings ISTFA 1986: International Symposium for Testing and Failure Analysis 1986: [electronic resource] :: 20-24 October 1986, Los Angeles, California, USA |
6.B |
ISTFA |
ISTFA 1987 V1: International Symposium for Testing and Failure Analysis 1987: Proceedings of the Microelectronics Symposium: [electronic resource] :: 9-13 November, 1987, Los Angeles, California, USA |
6.B |
ISTFA |
ISTFA 1987 V2: International Symposium for Testing and Failure Analysis 1987: Proceedings of the Advanced Materials Symposium: [electronic resource] :: 9-13 November, 1987, Los Angeles, California, USA |
6.B |
ISTFA |
ISTFA 1988: International Symposium for Testing and Failure Analysis: [electronic resource] :: 31 October-4 November 1988, Los Angeles, California, USA |
6.B |
ISTFA |
ISTFA 1991: ISTFA'91: Proceedings of the 17th International Symposium for Testing & Failure Analysis: [electronic resource] : |
6.B |
JANTSCH, W |
DX-Centres and Other Metastable Defects in Semiconductors: Proceedings of the International Symposium, Mauterndorp, Austria, 18-22 February 1991 |
6.B |
JOHNSON, NOBLE M |
Microscopic Identification of Electronic Defects in Semiconductors: Symposium held April 15-18, 1985, San Francisco, California, U.S.A. |
6.B |
JOHNSON, R. WAYNE |
Multichip Modules: Systems Advantages, Major Constructions, and Materials Technologies |
6.B |
JOOBBANI, ROSTAM |
An Artificial Intelligence Approach to VLSI Routing |
6.B |
KANE, PHILIP F |
Characterization of Semiconductor Materials |
6.B |
KASPER, ERICH |
Silicon-Molecular Beam Epitaxy: Volume 1 |
6.B |
KASPER, ERICH |
Silicon-Molecular Beam Epitaxy: Volume 2 |
6.B |
KEETH, BRENT |
DRAM Circuit Design: A Tutorial |
6.B |
KRAMER, BERNHARD |
Quantum Transport in Semiconductor Submicron Structures |
6.B |
LAI, JUEY H |
Polymers for Electronic Applications |
6.B |
LEVINSON, HARRY J |
Lithography Process Control |
6.B |
LICARI, JAMES J. |
Coating Materials for Electronic Applications: Polymers, Processing, Reliability, Testing |
6.B |
LOCKWOOD, DAVID J |
Optical Phenomena in Semiconductor Structures of Reduced Dimensions |
6.B |
MANASREH, M. O. |
Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors |
6.B |
MANDELIS, ANDREAS |
Semiconductors and Electronic Materials |
6.B |
MANOS, DENNIS M |
Plasma Etching: An Introduction |
6.B |
MATE |
MATE 2002: 8th Symposium on Microjoining and Assembly Technology in Electronics: January 31 - February 1 2002 |
6.B |
MCGILL, T. C |
Growth and Optical Properties of Wide-Gap II-VI Low-Dimensional Semiconductors |
6.B |
MCGUIRE, GARY E |
Semiconductor Materials and Process Technology Handbook: For Very Large Scale Integration (VLSI) and Ultra Large Scale Integration (ULSI) |
6.B |
MICROELECTRONIC |
Microelectronic 1967: The Second Symposium on Hybrid Microelectronics: October 30-31, 1967, Somerset Hotel, Boston, Massachusetts |
6.B |
MICROELECTRONIC |
Microelectronic 1968: 1968 Hybrid Microelectronics Symposium: October 28-30, 1968, O'Hare, Inn, Rosmont, Illinois |
6.B |
MICROELECTRONIC |
Microelectronic 1973: 1973 International Microelectronic Symposium: October 22-24, 1973, Sheraton-Palace Hotel, San Francisco, California |
6.B |
MICROELECTRONIC |
Microelectronic 1974: 1974 International Microelectronic Symposium: October 21-23, 1974, Sheraton-Boston Hotel, Boston, Massachusetts |
6.B |
MICROELECTRONIC |
Microelectronic 1975: 1975 International Microelectronic Symposium: October 27-29, 1975, Sheraton-Towers Hotel, Orlando, Florida |
6.B |
MICROELECTRONIC |
Microelectronic 1983: The International Journal for Hybrid Microelectronics, Volume 6, Number 1: Special Issue on the 1983 International Journal for Hybrid Microelectronics Symposium: October 31-November 2, 1983, Philadelphia, PA |
6.B |
MILLER, LEWIS F |
Thick Film Technology and Chip Joining |
6.B |
MILNE, A. D |
MOS Devices: Design and Manufacture |
6.B |
MILNES, A. G |
Semiconductor Devices and Integrated Electronics |
6.B |
NAVON, DAVID H |
Electronic Materials and Devices |
6.B |
NEBEL, CHRISTOPH E. |
Thin-Film Diamond II |
6.B |
PACKARD, RICHARD D |
Mercury Cadmium Telluride as a 1- to 20-Micro-Meter Wavelength Infrared Detector for Space Applications |
6.B |
PEARSALL, T. P |
GaInAsP Alloy Semiconductors |
6.B |
PHYSICS |
1985 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride: 8-10 October, 1985, San Diego, California |
6.B |
PHYSICS |
1986 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride: 7-9 October, 1986, Dallas, Texas |
6.B |
PHYSICS |
1987 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride: 6-8 October 1987, New Orleans, Louisiana |
6.B |
PHYSICS |
1988 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride: 11-13 October 1988, Orlando, Florida |
6.B |
PHYSICS |
1989 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Related II-VI Compounds: 3-5 October 1989, San Diego, California |
6.B |
PHYSICS |
1991 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and other II-VI Compounds: 8-10 October 1991, Dallas, Texas |
6.B |
PHYSICS |
1993 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials: 19-21 October 1993 |
6.B |
PHYSICS |
1994 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials: 4-6 October 1994, San Antonio, Texas |
6.B |
PHYSICS |
1995 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials: 10-12 October 1995, Baltimore, Maryland |
6.B |
PHYSICS |
1996 U.S. Workshop on the Physics and Chemistry of II-VI Materials: 22-24 October 1996 |
6.B |
PHYSICS |
1997 U.S. Workshop on the Physics and Chemistry of II-VI Materials: 21-23 October 1997, Santa Barbara, California |
6.B |
POHL, UDO W. |
Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures |
6.B |
QUANTUM |
QUANTUM 1994: Sixth Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices Symposium: University of Missouri, St. Louis, Missouri, May 27-28, 1994 |
6.B |
QUANTUM |
QUANTUM 1998: Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices: Seventh Symposium, University of Missouri, St. Louis, Missouri, August 7-8, 1998 |
6.B |
REGHBATI, HASSAN K |
Tutorial: VLSI Testing & Validation Techniques |
6.B |
ROGALSKI, ANTONI |
Narrow-gap Semiconductor Photodiodes |
6.B |
RUNYAN, WALTER R |
Semiconductor Integrated Circuit Processing Technology |
6.B |
RUNYAN, W. R |
Semiconductor Measurements and Instrumentation |
6.B |
SEIDEL, ACHIM |
Highly Integrated Gate Drivers for Si and GaN Power Transistors |
6.B |
SEILER, DAVID G |
Physics and Chemistry of Mercury Cadmium Telluride and Novel IR Detector Materials: San Francisco, CA 1990 |
6.B |
SELBERHERR, SIEGFRIED |
Analysis and Simulation of Semiconductor Devices |
6.B |
SÉQUIN, CARLO H |
Charge Transfer Devices |
6.B |
SESHAN, KRISHNA |
Handbook of Thin Film Deposition |
6.B |
SHERMAN, ARTHUR |
Chemical Vapor Deposition for Microelectronics: Principles, Technology, and Applications |
6.B |
SOLID-STATE SENSOR |
Solid-State Sensors 2000: Technical Digest, Solid-State Sensor and Actuator Workshop 2000: Hilton Head Island, South Carolina, June 4-8 |
6.B |
SOLYMAR, LASZLO |
Lectures on the Electrical Properties of Materials |
6.B |
SRINIVASAN, G.R |
Process Physics and Modeling in Semiconductor Technology: Proceedings of the Second International Symposium.Volume 91-4 |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 10: transport phenomena |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 11: solar cells |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 12: infrared detectors II |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 13: cadmium telluride |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 14: laser, junctions, transport |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 15: contacts, junctions, emitters |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 16: defects, (HgCd)Se, (HgCd)Te |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 17: CW beam processing of silicon and other semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 18: Mercury cadmium telluride |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 19: deep levels, GaAs, alloys, photochemistry |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 1: physics of III-V compounds |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and Semimetals: Volume 20: Semi-Insulating GaAs |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 21: hydgogenated amorphous silicon: part A: preparation and structure |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 21: hydgogenated amorphous silicon: part B: optical properties |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 21: hydgogenated amorphous silicon: part D: device applications |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 22: lightwave communications technology: part A: material growth technologies |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 22: lightwave communications technology: part B: semiconductor injection lasers, I |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 22: lightwave communications technology: part C: semiconductor injection lasers, II ; light-emitting diodes |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 22: lightwave communications technology: part D: photodetectors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 22: lightwave communications technology: part E: integrated optoelectronics |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 23: pulsed laser processing of semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 24: applications of multiquantum wells, selective doping, and superlattices |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 25: diluted magnetic semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 26: III-V compound semiconductors and semiconductor properties of superionic materials |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 27: highly conducting quasi-one-dimensional organic crystals |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 28: measurement of high-speed signals in solid state devices |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 29: very high speed integrated circuits: gallium arsenide LSI |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 2: physics of III-V compounds |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 30: very high speed integrated circuits: heterostructure |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 31: indium phosphide: crystal growth and characterization |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 32: strained-layer superlattices: physics |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 33: strained-layer superlattices: materials science and technology |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 34: hydrogen in semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 35: nanostructured systems |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 36: the spectroscopy of semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 37: the mechanical properties of semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 38: imperfections in III/V materials |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 39: minority carriers in III-V semiconductors: physics and applications |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 3: optical properties of III-V compounds |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 40: epitaxial microstructures |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 41: high speed heterostructure devices |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 42: oxygen in silicon |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 43: semiconductors for room temperature nuclear detector applications |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 44: II-VI blue/green light emitters: device physics and epitaxial growth |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 45: effect of disorder and defects in ion-implanted semiconductors: electrical and physicochemical characterization |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 46: effect of disorder and defects in ion-implanted semiconductors: optical and photothermal characterization |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 47: uncooled infrared imaging arrays and systems |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 48: high brightness light emitting diodes |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 49: light emission in silicon: from physics to devices |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 4: physics of III-V compounds |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 50: gallium nitride (GaN) I |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 51 A: identification of defects in semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 51 B: identification of defects in semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 52: SiC materials and devices |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 53: cumulative subject and author index including tables of contents, volumes 1-50 |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 54: high pressure in semiconductor physics I |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 55: high pressure in semiconductor physics II |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 56: germanium silicon: physics and materials |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 57: gallium nitride (GaN) II |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 58: ninlinear optics in semiconductors I |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 59: nonlinear optics in semiconductors II |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 5: infrared detectors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 60: self-assembled InGaAs/GaAs quantum dots |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 61: hydrogen in semiconductors II |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 62: intersubband transitions in quantum wells: physics and device applications I |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 63: chemical mechanical polishing in silicon processing |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 64: electroluminesence I |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 65: electroluminesence II |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 66: intersubband transitions in quantum wells: physics and device applications II |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 67: ultrafast physical processes in semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 68: isotope effects in solid state physics |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 69: recent trends in thermoelectric materials research I |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 6: injection phenomena |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 70: recent trends in thermoelectric materials research II |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 71: recent trends in thermoelectric materials research III |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 72: silicon epitaxy |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 73: processing and properties of compound semiconductors |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 74: silicon-germanium strained layers and heterostructures |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 75: laser crystallization of silicon: Vol. 75 |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 76: thin-film diamond I: Vol. 75 |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 78: semiconducting chalcogenide glass I: glass formation, structure, and stimulated transformations in chalcogenide glasses: Vol. 78 |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 79: semiconducting chalcogenide glass II: properties of chalcogenide glasses: Vol. 78 |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 7: applications and devices: part A |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 7: applications and devices: part B |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 80: semiconducting chalcogenide glass III: applications of chalcogenide glasses: Vol. 78 |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 8: transport and optical phenomena |
6.B |
S/ SEMICONDUCTORS |
Semiconductors and semimetals: volume 9: modulation techniques |
6.B |
SZE, S. M |
Physics of Semiconductor Devices |
6.B |
TAKAGAHARA, T |
Quantum Coherence, Correlation and Decoherence in Semiconductor Nanostructures |
6.B |
TEWKSBURY, STUART K |
Wafer-Level Integrated Systems: Implementation Issues |
6.B |
TICKLE, ANDREW C |
Thin-Film Transistors: A New Approach to Microelectronics |
6.B |
TOPFER, MORTON L |
Thick-Film Microelectronics: Fabrication, Design, and Applications |
6.B |
TURNER, RUFUS P |
Semiconductor Devices |
6.B |
VACUUM MICROELECTRONICS |
Vacuum Microelectronics 1988: The First International Vacuum Microelectronics Conference Technical Program: Royce Hotel, Williamsburg, Virginia, USA, June 13-15, 1988 |
6.B |
VAN DUZER, THEODORE |
Principles of Superconductive Devices and Circuits |
6.B |
WANG, NIANTSU |
Digital MOS Integrated Circuits: Design for Applications |
6.B |
WEBER, SAMUEL |
Large and Medium Scale Integration: Devices and Applications |
6.B |
YEPIFANOV, G. I |
Introduction to Solid-State Electronics |
6.B |
ZEMEL, JAY N |
Nondestructive Evaluation of Semiconductor Materials and Devices: Lectures presented at the NATO Advanced Study Institute on Nondestructive Evaluation of Semiconductor Materials and Devices, held at the Villa Tuscolano, Italy, September 19-29, 1978 |